Novel top-down wafer-scale fabrication of single crystal silicon nanowires

Nano Letters

Volumn 9, Issue 3, 2009, Pages 1015-1022

  Tong, Hien Duy ^a,b,c   Chen, Songyue ^a,b   Van Der Wiel, Wilfred G ^a,b   Carlen, Edwin T ^a,b   Van Berg, Albert Den ^a,b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

^c Nanosens   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CLEANROOM FACILITIES; DEVICE CHARACTERIZATIONS; DEVICE OPERATIONS; ELECTRICAL MEASUREMENTS; ELECTROCHEMICAL BEHAVIORS; FABRICATION TECHNOLOGIES; GENERAL DESCRIPTIONS; I-V CHARACTERISTICS; METAL LAYERS; METALLIC NANOWIRES; MICRO TECHNOLOGIES; MICRO-METER SCALE; OXIDIZED SILICONS; PROCESS TECHNOLOGIES; SENSOR APPLICATIONS; SINGLE CRYSTAL SILICONS; SITE BINDINGS; SPECIFIC CONTACT RESISTIVITIES; THIN-FILM DEPOSITIONS; TOP DOWNS; WAFER-SCALE; WAFER-SCALE FABRICATIONS;

BINDING SITES; ELECTRIC WIRE; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; THICKNESS MEASUREMENT;

SILICON WAFERS;

EID: 65249093295     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803181x     Document Type: Article

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