Numerical investigation of relationship between micro-scale pattern, interfacial plasma structure and feature profile during deep-Si etching in two-frequency capacitively coupled plasmas in SF6/O2

Journal of Physics D: Applied Physics

Volumn 42, Issue 7, 2009, Pages

  Hamaoka, Fukutaro ^a   Yagisawa, Takashi ^a   Makabe, Toshiaki ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INDUCTIVELY COUPLED PLASMA; IONS; MIXTURES; MOLDING; OXYGEN; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS;

CAPACITIVELY COUPLED PLASMAS; CHEMICAL ETCHINGS; ETCHING PROFILES; ETCHING RATES; HOLE PATTERNS; INTERFACIAL STRUCTURES; ION FLUXES; ISOTROPIC ETCHINGS; MICRO-SCALE; MIXTURE RATIOS; NUMERICAL INVESTIGATIONS; ORDER OF MAGNITUDES; OXYGEN MIXTURES; PASSIVATION LAYERS; PLASMA STRUCTURES; SHEATH STRUCTURES; SHEATH THICKNESS; SI WAFERS; TOTAL GAS PRESSURES;

ANISOTROPIC ETCHING;

EID: 63649157736     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/7/075201     Document Type: Article

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