Modeling of Si etching under effects of plasma molding in two-frequency capacitively coupled plasma in SF6/O2 for MEMS fabrication

IEEE Transactions on Plasma Science

Volumn 35, Issue 5 I, 2007, Pages 1350-1358

  Hamaoka, Fukutaro ^a   Yagisawa, Takashi ^a   Makabe, Toshiaki ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Deep reactive ion etching (Deep RIE); Microelectromechanical system (MEMS) fabrication; Negative ion plasma; SF6 O2 plasma; Two frequency capacitively coupled plasma (2f CCP)

Indexed keywords

ANGULAR DISTRIBUTION; COMPUTER AIDED DESIGN; ETCHING; MEMS; PLASMA APPLICATIONS; SILICON WAFERS;

DEEP REACTIVE ION ETCHING; NEGATIVE-ION PLASMA; PLASMA MOLDING; TWO-FREQUENCY CAPACITIVELY COUPLED PLASMA;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 35348829227     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2007.901904     Document Type: Article

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