Effects of plasma molding on feature profile of silicon micro-electro-mechanical systems through flux ion velocity distributions in two-frequency capacitively coupled plasma in SF6/O2

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 A, 2007, Pages 3059-3065

  Hamaoka, Fukutaro ^a   Yagisawa, Takashi ^a   Makabe, Toshiaki ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

2f CCP; MEMS fabrication; Modeling of etching; Negative ion plasma; SF 6 O2 plasma

Indexed keywords

IONS; MICROMETERS; PLASMA APPLICATIONS; PLASMA SHEATHS; SILICON; VELOCITY DISTRIBUTION;

ARTIFICIAL MICROSCALE; PLASMA MOLDING; POTENTIAL DISTRIBUTION;

MEMS;

EID: 34547920416     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3059     Document Type: Article

References (32)

1. I. W. Rangelow and H. Löschener: J. Vac. Sci. Technol. B 13 (1995) 2394.
2. S. Gomez, R. J. Belen, M. Kiehlbauch, and E. S. Aydil: J. Vac. Sci. Technol. A 22 (2004) 606.
3. F. Laermer and A. Schilp: U.S. Patent 5501893 (1994);
4. German Patent DE4241045 (1994).
5. S. Tachi, K. Tsujimoto, S. Arai, and T. Kure: J. Vac. Sci. Technol. A 9 (1991) 796.
6. M. J. de Boer, J. G. E. (Han) Gardeniers, H. V. Jansen, E. Smulders, M. Gilde, G. Roelofs, J. N. Sasserath, and M. Elwenspoek: J. Microelectromech. Syst. 11 (2002) 385.
7. R. Dussart, M. Boufnichel, G. Marcos, P. Lefaucheux, A. Basillais, R. Benoit, T. Tillocher, X. Mellhaoui, H. Estrade-Szwarckopf, and P. Ranson: J. Micromech. Microeng. 14 (2004) 190.
8. S. Aachboun and P. Ranson: J. Vac. Sci. Technol. A 17 (1999) 2270.
9. D. Kim and D. J. Economou: IEEE Trans. Plasma Sci. 30 (2002) 2048.
10. D. Kim and D. J. Economou: J. Vac. Sci. Technol. B 21 (2003) 1248.
11. T. Makabe and K. Maeshige: Appl. Surf. Sci. 192 (2002) 176.
12. T. Makabe and Z. Lj. Petrovic̀: Plasma Electronics: Applications in Microelectronic Device Fabrication (Taylor & Francis, New York, 2006) p. 205.
13. Advances in Low Temperature RF Plasmas, ed. T. Makabe (Elsevier, Amsterdam, 2002) p. 176.
14. N. Nakano, N. Shimura, Z. Lj. Petrovic, and T. Makabe: Phys. Rev. E 49 (1994) 4455.
15. M. Shibata, T. Makabe, and N. Nakano: Jpn. J. Appl. Phys. 34 (1995) 6230.
16. H. Itoh, Y. Miura, N. Ikuta, Y. Nakao, and H. Tagashira: J. Phys. D 21 (1988) 922.
17. R. Morrow: IEEE Trans. Plasma Sci. 14 (1986) 234.
18. J. K. Olthoff, R. J. Van Brunt, Y. Wang, R. L. Champion, and L. D. Doverspike: J. Chem. Phys. 91 (1989) 2261.
19. Y. Itikawa, A. Ichimura, K. Onda, K. Sakimoto, K. Takayanagi, Y. Hatano, M. Hayashi, H. Nishimura, and S. Tsurubuchi: J. Phys. Chem. Ref. Data 18 (1989) 23.
20. S. Rauf and M. J. Kushner: J. Appl. Phys. 82 (1997) 2805.
21. M. McFarland, D. L. Albritton, F. C Fehsenfeid, E. E. Ferguson, and A. L. Schmeltekopf: J. Chem. Phys. 59 (1973) 6620.
22. R. M. Snuggs, D. J. VoIz, I. R. Gatland, J. H. Schummers, D. W. Martin, and E. W. McDaniel: Phys. Rev. A 3 (1971) 487.
23. Reaction Rate Handbook (Defence Nuclear Agency, Washington D.C., 1978) 2nd ed., DNA1948H.
24. W. H. Aberth and J. R. Peterson: Phys. Rev. A 1 (1970) 158.
25. K. Maeda and T. Makabe: Jpn. J. Appl. Phys. 33 (1994) 4173.
26. T. Yagisawa and T. Makabe: IEEE Trans. Plasma Sci. 31 (2003) 521.
27. B. E. Thompson, H. H. Sawin, and D. A. Fisher: J. Appl. Phys. 63 (1988) 2241.
28. T. Shimada, T. Yagisawa, and T. Makabe: Jpn. J. Appl. Phys. 45 (2006) L132.
29. D. J. Thomson and C R. Helms: Surf. Sci. 236 (1990) 41.
30. T. Chevolleau, P. Y. Tessier, C. Cardinaud, and G. Turban: J. Vac. Sci. Technol. A 15 (1997) 2661.
31. T. Yagisawa, K. Maeshige, T. Shimada, and T. Makabe: IEEE Trans. Plasma Sei. 32 (2004) 90.
32. M. Boufniehel, S. Aachboun, F. Grangeon, P. Lefaucheux, and P. Ranson: J. Vac. Sci. Technol. B 20 (2002) 1508.