Comparison between direct-contact HfO2/Ge and HfO 2/GeO2/Ge structures: Physical and electrical properties

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 375-385

  Abe, Yasuhiro ^a   Miyata, Noriyuki ^a,b   Yasuda, Tetsuji ^b  

^a TOKYO CITY UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DECOMPOSITION; DIELECTRIC DEVICES; GATE DIELECTRICS; GERMANIUM; GERMANIUM OXIDES; HIGH-K DIELECTRIC;

CURRENT CHARACTERISTIC; DIRECT CONTACT; GE DIFFUSION; HFO2 FILM; INTERFACE DIPOLE; NEGATIVE CHARGE; THERMALLY STABLE;

HAFNIUM OXIDES;

EID: 63149159332     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2981619     Document Type: Conference Paper

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