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Volumn 89, Issue 10, 2006, Pages

Two-step behavior of initial oxidation at HfO2/Si interface

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DEPOSITION; HAFNIUM COMPOUNDS; MONOLAYERS; OXIDATION; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

POSTDEPOSITION ANNEALING; SI INTERFACES; SI OXIDATION;

INTERFACES (MATERIALS);

EID: 33748500048 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2337878 Document Type: Article

Times cited : (37)

References (16)

1
- 0035872897
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

2
- 0034668553
- B. W. Busch, W. H. Schulte, E. Garfunkel, T. Gustafsson, W. Qi, R. Nieh, and J. Lee, Phys. Rev. B 62, R13290 (2000).
- (2000) Phys. Rev. B , vol.62
- Busch, B.W.¹ Schulte, W.H.² Garfunkel, E.³ Gustafsson, T.⁴ Qi, W.⁵ Nieh, R.⁶ Lee, J.⁷

3
- 0035844422
- H. Watanabe, Appl. Phys. Lett. 78, 3803 (2001).
- (2001) Appl. Phys. Lett. , vol.78 , pp. 3803
- Watanabe, H.¹

4
- 0036640491
- S. Stemmer, Z. Chen, R. Keding, J.-P. Maris, D. Wicaksana, and A. I. Kingon, J. Appl. Phys. 92, 82 (2002).
- (2002) J. Appl. Phys. , vol.92 , pp. 82
- Stemmer, S.¹ Chen, Z.² Keding, R.³ Maris, J.-P.⁴ Wicaksana, D.⁵ Kingon, A.I.⁶

5
- 79955989448
- K. P. Bastos, J. Morais, L. Miotti, R. P. Pezzi, G. V. Soares, I. J. R. Baumvol, R. I. Hegde, H. H. Tseng, and P. J. Tobin, Appl. Phys. Lett. 81, 1669 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1669
- Bastos, K.P.¹ Morais, J.² Miotti, L.³ Pezzi, R.P.⁴ Soares, G.V.⁵ Baumvol, I.J.R.⁶ Hegde, R.I.⁷ Tseng, H.H.⁸ Tobin, P.J.⁹

6
- 0037442260
- N. Miyata, M. Ichikawa, T. Nabatame, T. Horikawa, and A. Toriumi, Jpn. J. Appl. Phys., Part 2 42, L138 (2003).
- (2003) Jpn. J. Appl. Phys., Part 2 , vol.42
- Miyata, N.¹ Ichikawa, M.² Nabatame, T.³ Horikawa, T.⁴ Toriumi, A.⁵

7
- 0037643635
- M. Kundu, N. Miyata, T. Nabatame, T. Horikawa, M. Ichikawa, and A. Toriumi, Appl. Phys. Lett. 82, 3442 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3442
- Kundu, M.¹ Miyata, N.² Nabatame, T.³ Horikawa, T.⁴ Ichikawa, M.⁵ Toriumi, A.⁶

8
- 3142749109
- S. Ferrari and G. Scarel, J. Appl. Phys. 96, 144 (2004).
- (2004) J. Appl. Phys. , vol.96 , pp. 144
- Ferrari, S.¹ Scarel, G.²

9
- 4043062793
- M. Copel, M. C. Reuter, and P. Jamison, Appl. Phys. Lett. 85, 458 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 458
- Copel, M.¹ Reuter, M.C.² Jamison, P.³

10
- 0037175911
- A. S. Foster, A. L. Shluger, and R. M. Nieminen, Phys. Rev. Lett. 89, 225901 (2002).
- (2002) Phys. Rev. Lett. , vol.89 , pp. 225901
- Foster, A.S.¹ Shluger, A.L.² Nieminen, R.M.³

11
- 0032679052
- K. J. Yang and C. Hu, IEEE Trans. Electron Devices 46, 1500 (1999).
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 1500
- Yang, K.J.¹ Hu, C.²

12
- 0001954222
- J. R. Hauser and K. Ahmed, AIP Conf. Proc. 449, 235 (1998).
- (1998) AIP Conf. Proc. , vol.449 , pp. 235
- Hauser, J.R.¹ Ahmed, K.²

13
- 22144462124
- J. Zhu, J. G. van Ommen, H. J. M. Bouwmeester, and L. Lefferts, J. Catal. 233, 434 (2005).
- (2005) J. Catal. , vol.233 , pp. 434
- Zhu, J.¹ Van Ommen, J.G.² Bouwmeester, H.J.M.³ Lefferts, L.⁴

14
- 20844461810
- S. Fujii, N. Miyata, S. Migita, T. Horikawa, and A. Toriumi, Appl. Phys. Lett. 86, 212907 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 212907
- Fujii, S.¹ Miyata, N.² Migita, S.³ Horikawa, T.⁴ Toriumi, A.⁵

15
- 0037421383
- H. Kim, P. C. Mclntyre, and K. C. Saraswat, Appl. Phys. Lett. 82, 106 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 106
- Kim, H.¹ Mclntyre, P.C.² Saraswat, K.C.³

16
- 0000969098
- U. Brossmann, R. Wurschum, U. Sodervall, and H. E. Schaefer, J. Appl. Phys. 85, 7646 (1999).
- (1999) J. Appl. Phys. , vol.85 , pp. 7646
- Brossmann, U.¹ Wurschum, R.² Sodervall, U.³ Schaefer, H.E.⁴

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