Detection of misfit dislocations at interface of strained Si/Si 0.8Ge0.2 by electron-beam-induced current technique

Applied Physics Letters

Volumn 84, Issue 17, 2004, Pages 3316-3318

  Yuan, X L ^a   Sekiguchi, T ^a   Ri, S G ^b   Ito, S ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRON BEAMS; ELECTRON ENERGY LEVELS; ETCHING; HETEROJUNCTIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

DETECTION LIMITS; ELECTRON-BEAM-INDUCED CURRENT (EBIC); SCHOTTKY CONTACT; THREADING DISLOCATIONS (TD);

DISLOCATIONS (CRYSTALS);

EID: 2542468875     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1734688     Document Type: Article

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