Impact of germanium surface passivation on the leakage current of shallow planar p-n junctions

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 716-720

  Satta, A ^a   Nicholas, G ^a   Simoen, E ^a   Houssa, M ^a   Dimoulas, A ^b   De Jaeger, B ^a   Van Steenbergen, J ^a   Meuris, M ^a  

^a IMEC   (Belgium)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

Leakage current; Shallow junctions; Surface passivation

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL DEFECTS; LEAKAGE CURRENTS; PASSIVATION; SUBSTRATES;

LATTICE DAMAGE; SHALLOW JUNCTIONS; SUBSTRATE DOPING DENSITY; SURFACE GENERATION CURRENT;

GERMANIUM;

EID: 33845219627     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.037     Document Type: Article

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