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Volumn 25, Issue 10, 2004, Pages 1193-1204

HfO2 gate dielectrics for future generation of CMOS device application

Author keywords

Hafnium aluminates; HfN; HfO2; High k gate dielectrics; Metal gate electrode

Indexed keywords

ANNEALING; BAND STRUCTURE; CMOS INTEGRATED CIRCUITS; DIELECTRIC PROPERTIES OF SOLIDS; ENERGY GAP; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 12144274771     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.