Characterization of 1.9- and 1.4-nm ultrathin gate oxynitride by oxidation of nitrogen-implanted silicon substrate

IEEE Transactions on Electron Devices

Volumn 51, Issue 1, 2004, Pages 113-120

  Xu, Qiuxia ^a   Qian, He ^a   Han, Zhensheng ^a   Lin, Gang ^a   Liu, Ming ^a   Chen, Baoqing ^a   Zhu, Chuanfeng ^b   Wu, Dexin ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b INSTITUTE OF CHEMISTRY   (China)

Author keywords

Boron penetration; Micro roughness of interface; Oxidation of N implanted silicon substrate; Oxidation retardation; Tunneling leakage; Ultrathin gate oxynitride

Indexed keywords

ANNEALING; BORON; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); ION IMPLANTATION; LEAKAGE CURRENTS; MOS CAPACITORS; NITRIDES; OXIDATION; SEMICONDUCTING SILICON; THICKNESS MEASUREMENT; ULTRATHIN FILMS;

EQUIVALENT OXIDE THICKNESS; GATE OXIDE; TUNNELING LEAKAGE; ULTRATHIN GATE OXYNITRIDE;

MOSFET DEVICES;

EID: 0742304011     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.821389     Document Type: Article

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