Fully-screened polarization-induced electric fields in blueviolet InGaNGaN light-emitting devices grown on bulk GaN

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Franssen, G ^a   Suski, T ^a   Perlin, P ^a   Bohdan, R ^a,b   Bercha, A ^a,c   Trzeciakowski, W ^a   Makarowa, I ^a   Prystawko, P ^a   Leszczynski M ^a   Grzegory, I ^a   Porowski, S ^a   Kokenyesi, S ^b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF DEBRECEN   (Hungary)

^c UZHGOROD NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC MODES; PHOTOCURRENT SPECTROSCOPY; POLARAIZATION-INDUCED ELECTRIC FIELDS; QUANTUN BARRIERS;

ELECTRIC FIELD EFFECTS; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; METALLIC FILMS; OPTICAL SWITCHES; PHOTOCURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

INDIUM COMPOUNDS;

EID: 23744457000     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2000331     Document Type: Article

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