Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure

Journal of Crystal Growth

Volumn 310, Issue 2, 2008, Pages 356-363

  Plante, M C ^a   LaPierre, R R ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B1. Nanowires; B2. Semiconducting gallium arsenide; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

PERIODICITY; RADIAL GROWTH MODELS; SEMICONDUCTING III-V MATERIALS;

NANOWIRES;

EID: 37349000589     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.10.050     Document Type: Article

References (32)

1. Xia Y.N., Yang P.D., Sun Y.G., Wu Y.Y., Mayers B., Gates B., Yin Y.D., Kim F., and Yan Y.Q. Adv. Mater. 15 (2003) 353
2. Wagner R.S., and Ellis W.C. Appl. Phys. Lett. 4 (1964) 89
3. Hiruma K., Katsuyama T., Ogawa K., Koguchi M., Kakibayashi H., and Morgan G.P. Appl. Phys. Lett. 59 (1991) 431
4. Björk M.T., Ohlsson B.J., Sass T., Persson A.I., Thelander C., Magnusson M.H., Deppert K., Wallenberg L.R., and Samuelson L. Nano Lett. 2 (2002) 87
5. Regolin I., Sudfeld D., Luttjohann S., Khorenko V., Prost W., Kastner J., Dumpich G., Meier C., Lorke A., and Tegude F.J. J. Crystal Growth 298 (2007) 607
6. Martensson T., Svensson C.P.T., Wacaser B.A., Larsson M.W., Seifert W., Deppert K., Gustafsson A., Wallenberg L.R., and Samuelson L. Nano Lett. 4 (2004) 1987
7. Bakkers E.P.A.M., Borgstrom M.T., and Verheijen M.A. MRS Bull. 32 (2007) 117
8. 〈http://www.itrs.net/reports.html〉.
9. Bryllert T., Wernersson L.E., Lowgren T., and Samuelson L. Nanotechnology 17 (2006) S227
10. Heeres E.C., Bakkers E.P.A.M., Roest A.L., Kaiser M., Oosterkamp T.H., and de Jonge N. Nano Lett. 7 (2007) 536
11. Minot E.D., Kelkensberg F., van Kouwen M., van Dam J.A., Kouwenhoven L.P., Zwiller V., Borgstrom M.T., Wunnicke O., Verheijen M.A., and Bakkers E.P.A.M. Nano Lett. 7 (2007) 367
12. Samuelson L. Mater. Today 6 (2003) 22
13. Patolsky F., Timko B.P., Zheng G.F., and Lieber C.M. MRS Bull. 32 (2007) 142
14. Persson A.I., Bjork M.T., Jeppesen S., Wagner J.B., Wallenberg L.R., and Samuelson L. Nano Lett. 6 (2006) 403
15. Chen C., Plante M.C., Fradin C., and LaPierre R.R. J. Mater. Res. 21 (2006) 2801
16. 〈http://www.axt.com/〉.
17. 〈http://www.svta.com/〉.
18. Plante M.C., Garrett J., Ghosh S.C., Kruse P., Schriemer H., Hall T., and LaPierre R.R. Appl. Surf. Sci. 253 (2006) 2348
19. Plante M.C., and LaPierre R.R. J. Crystal Growth 286 (2006) 394
20. Neave J.H., Dobson P.J., Joyce B.A., and Zhang J. Appl. Phys. Lett. 47 (1985) 100
21. Tchernycheva M., Harmand J.C., Patriarche G., Travers L., and Cirlin G.E. Nanotechnology 17 (2006) 4025
22. Piccin M., et al. Physica E 37 (2007) 134
23. Nötzel R., Däweritz L., and Ploog K. Phy. Rev. B 46 (1992) 4736
24. Jacobi K., Geelhaar L., Marquez J., Platen J., and Setzer C. Appl. Surf. Sci. 166 (2000) 173
25. Sköld N., Wagner J.B., Karlsson G., Hernán T., Seifert W., Pistol M.E., and Samuelson L. Nano Lett. 6 (2006) 2743
26. Harmand J.C., Patriarche G., Pr-Laperne N., Mrat-Combes M.-N., Travers L., and Glas F. Appl. Phys. Lett. 87 (2005) 203101
27. Hannon J.B., Kodambaka S., Ross F.M., and Tromp R.M. Nature 440 (2006) 69
28. Xiong Q.H., Wang J., and Eklund P.C. Nano Lett. 6 (2006) 2736
29. Hao Y.F., Meng G.W., Wang Z.L., Ye C.H., and Zhang L.D. Nano Lett. 6 (2006) 1650
30. Johansson J., Wacaser B.A., Dick K.A., and Seifert W. Nanotechnology 17 (2006) S355
31. Hiruma K., Yazawa M., Haraguchi K., Ogawa K., Katsuyama T., Koguchi M., and Kakibayashi H. J. Appl. Phys. 74 (1993) 3162
32. Helveg S., Lopez-Cartes C., Sehested J., Hansen P.L., Clausen B.S., Rostrup-Nielsen J.R., Abild-Pedersen F., and Norskov J.K. Nature 427 (2004) 426