GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 620-624

  Paiano, P ^a   Prete, P ^b   Speiser, E ^c   Lovergine, N ^a   Richter, W ^c   Tapfer, L ^d   Mancini, A M ^a  

^a UNIVERSITY OF SALENTO   (Italy)

^b CNR   (Italy)

^c UNIVERSITY OF ROME TOR VERGATA   (Italy)

^d ENEA   (Italy)

Author keywords

A1. Nanostructures; A1. X ray diffraction; A2. Self assembly; A3. Metalorganic vapor phase epitaxy; B1. Nanowires; B2. Semiconducting gallium arsenide

Indexed keywords

CATALYSTS; CRYSTAL ORIENTATION; GOLD; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHONONS; RAMAN SCATTERING; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

CATALYST DROPLETS; CRYSTALLOGRAPHIC ORIENTATION; NANOWIRES; PHONON CONTRIBUTIONS;

NANOSTRUCTURED MATERIALS;

EID: 33846454355     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.107     Document Type: Article

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