Interfacet surface diffusion in selective area epitaxy of III-V semiconductors

Applied Physics Letters

Volumn 74, Issue 15, 1999, Pages 2197-2199

  Verschuren, C A ^a   Leys, M R ^a   Vonk, H ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

INTERFACET SURFACE DIFFUSION; SELECTIVE AREA EPITAXY (SAE);

SEMICONDUCTOR GROWTH;

EID: 0032614965     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123799     Document Type: Article

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