High capacitance density metal-insulator-metal structure based on Al 2O3-HfTiO nanolaminate stacks

Applied Physics Letters

Volumn 90, Issue 1, 2007, Pages

  Mikhelashvili, V ^a   Eisenstein, G ^a   Lahav, A ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CURRENT DENSITY; LEAKAGE CURRENTS; STACKING FAULTS;

CAPACITANCE DENSITY; NANOLAMINATE STACK; TEMPERATURE CAPACITANCE; VOLTAGE COEFFICIENTS;

MIM DEVICES;

EID: 33846081882     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2425030     Document Type: Article

References (10)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. F. Chen, X. Bin, C. Hella, X. Shi, W. L. Gladfelter, and S. A. Campbel, Microelectron. Eng. 72, 263 (2004).
3. R. J. Cava, W. F. Peck, Jr., and J. J. Krajewski, Nature (London) 377, 215 (1995).
4. R. J. Cava, W. F. Peck, Jr., J. J. Krajewski, and G. L. Roberts, Mater. Res. Bull. 31, 295 (1996).
5. V. Mikhelashvili and G. Eisenstein, J. Appl. Phys. 89, 3256 (2001).
6. H. Hu, C. Zhu, X. Yu, A. Chin, M. F. Li, B. J. Cho, D.-L. Kwong, P. D. Foo, M. B. Yu, X. Liu, and J. Winkler, IEEE Electron Device Lett. 24, 60 (2003).
7. X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D.-L. Kwong, P. D. Foo, and M. B. Yu, IEEE Electron Device Lett. 24, 63 (2003).
8. C. Svensson and I. Lundstrom, J. Appl. Phys. 44, 4657 (1973).
9. J. A. Babcock, S. G. Balster, A. Pinto, D. Dirnecker, P. Steinmann, R. Jumpertz, and B. El-Kareh, IEEE Electron Device Lett. 22, 230 (2001).
10. S. B. Chen, C. H. Lai, A. Chin, J. C. Hsieh, and J. Liu, IEEE Electron Device Lett. 23, 185 (2002).