Investigation of scaling limits for PECVD SiN and ALD HfO 2/Al2O3 integrated MIM capacitors

ECS Transactions

Volumn 6, Issue 3, 2007, Pages 755-772

  Dornisch, D ^a   Wilk, G ^b   Li, G ^a   Ring, K M ^a   Howard, D J ^a   Racanelli, Marco ^a  

^a Jazz Semiconductor   (United States)

^b ASM AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CAPACITANCE; HAFNIUM OXIDES; HIGH-K DIELECTRIC; INSULATING MATERIALS; LEAKAGE CURRENTS; LOW-K DIELECTRIC; MIM DEVICES; NITRIDES; PLASTIC FILMS; SILICA; SILICON NITRIDE;

CAPACITANCE DENSITY; HIGH- K; MIM CAPACITORS; POWER SUPPLY VOLTAGE; RELIABILITY MODEL; RF-CMOS; SCALING LIMITS; TDDB LIFETIME;

DIELECTRIC MATERIALS;

EID: 45849127260     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728832     Document Type: Conference Paper

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