Coupling of advanced optical and chemical characterization techniques for optimization of high-κ dielectrics with nanometer range thickness

AIP Conference Proceedings

Volumn 931, Issue , 2007, Pages 292-296

  Licitra, C ^a   Martinez, E ^a   Rochat, N ^a   Veyron, T ^a   Grampeix, H ^a   Gely, M ^a   Colonna, J P ^a   Molas, G ^a  

^a CEA LETI   (France)

Author keywords

Auger; Bonding states; Ellipsometry; FTIR; Hafnium aluminates; High K; Optical properties; XPS

Indexed keywords

EID: 35348918770     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2799386     Document Type: Conference Paper

References (10)

1. G. D. Wilk, R. M. Wallace and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. The International Technology Roadmap for Semiconductors (http://public.itrs.net/).
3. N. Rochat, A. Chabli, F. Bertin, M. Olivier, C. Vergnaud, and P. Mur, J. Appl. Phys. 91(8), 5029 (2002).
4. N. V. Edwards, AIP Conf. Proc. 683, 723 (2003).
5. G. E. Jellison, Jr. and F. A. Modine, Appl. Phys. Lett. 69, 371 (1996);
6. 69, 2137 (1996).
7. P. Boher, P. Evrard, O. Condat, C. Dos Reis, C. Defranoux, J. Ph. Piel, J. L. Stehle and E. Bellandi, Thin Solid Films 455-456 (2004), 798-803.
8. N. V. Nguyen, S. Sayan, I. Levin, J. R. Ehrstein, I. J. R. Baumvol, C. Driemeier, C. Krug, L. Wielunski, P. Y. Hung, and Alain Diebold, J. Vac. Sci. Technol. A 23, 1706 (2005).
9. N. Rochat, K. Dabertrand, V. Cosnier, S. Zoll, P. Besson, and U. Weber, Phys. Status Solidi C, 0(8), 2961 (2003).
10. M.-H. Cho, D. W. Moon, S. A. Park, Y. K. Kim, K. Jeong, S. K. Kang, D.-H. Ko, S. J. Doh, J. H. Lee, and N. I. Lee, Appl. Phys. Lett. 84, 5243 (2004).