InAlN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 218-222

  Cico K ^a   Kuzmik J ^a,b   Liday, J ^c   Husekova K ^a   Pozzovivo, G ^b   Carlin, J F ^d   Grandjean, N ^d   Pogany, D ^b   Vogrincic P ^c   Frohlich K ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^d EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; AUGERS; CHEMICAL VAPOR DEPOSITION; CIVIL AVIATION; ELECTRIC CURRENT MEASUREMENT; ELECTRODEPOSITION; ELECTRON MOBILITY; ELECTRON SPECTROSCOPY; GASES; HIGH ELECTRON MOBILITY TRANSISTORS; INDUSTRIAL CHEMICALS; LEAKAGE (FLUID); ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; OZONE WATER TREATMENT; SELF ASSEMBLED MONOLAYERS;

AUGER ELECTRONS; CARBON-RELATED TRAPS; CARRIER GAS; CHEMICAL VAPOUR DEPOSITIONS; CURRENT COLLAPSE; CURRENT VOLTAGES; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRICAL PERFORMANCE; GATE-LEAKAGE CURRENTS; HETEROSTRUCTURES; INSULATING FILMS; METAL ORGANIC; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; METAL-OXIDE-SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTORS; SCHOTTKY GATES; SPECTROSCOPY MEASUREMENTS;

AUGER ELECTRON SPECTROSCOPY;

EID: 59949088954     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3021034     Document Type: Article

References (23)

1. V. Adivarahan, J. Yang, A. Koudymov, G. Simin, and M. A. Khan, IEEE Electron Device Lett. 26, 535 (2005).
2. M. A. Khan, X. Hu, G. Simin, A. Lunev, J. Yang, R. Gaska, and M. S. Shur, IEEE Electron Device Lett. 21, 63 (2000).
3. V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, IEEE Electron Device Lett. 24, 541 (2003).
4. J. Kuzmik, G. Konstantinidis, S. Harasek, S. Hascik, E. Bertagnolli, Semicond. Sci. Technol. 19, 1364 (2004).
5. S. Abermann, G. Pozzovivo, J. Kuzmik, G. Strasser, D. Pogany, J.-F. Carlin, N. Grandjean, and E. Bertagnolli, Semicond. Sci. Technol. 22, 1272 (2007).
6. P. D. Ye, B. Yang, K. K. Ng, J. Bude, G. D. Wilk, S. Halder, and J. C. M. Hwang Appl. Phys. Lett. 86, 063501 (2005).
7. T. Hashizume, S. Ootomo, T. Inagaki, and H. Hasegawa, J. Vac. Sci. Technol. B 21, 1828 (2003).
8. G. Pozzovivo, J. Kuzmík, S. Golka, W. Schrenk, G. Strasser, D. Pogany, K. Čičo, M. apajna, K. Fröhlich, J.-F. Carlin, M. Gonschorek, E. Feltin, and N. Grandjean, Appl. Phys. Lett. 91, 043509 (2007).
9. F. Medjdoub, N. Sarazin, M. Tordjman, M. Magis, M. A. di Forte-Poisson, Electron. Lett. 43, 691 (2007).
10. Ch.-T. Lee, H.-W. Chen, and H.-Y. Lee, Appl. Phys. Lett. 82, 4304 (2003).
11. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001).
12. J. Kuzmik, J.-F. Carlin, M. Gonschorek, A. Kostopoulos, Phys. Status Solidi A 204, 2019 (2007).
13. J. A. Bardwell, S. Haffouz, W. R. McKinnon, C. Storey, H. Tang, G. I. Sproule, D. Roth, and R. Wang, Electrochem. Solid-State Lett. 10, H46 (2007).
14. K. Čičo, J. Kuzmík, D. Gregušová, R. Stoklas, Microelectron. Reliab. 47, 790 (2007).
15. Q.-Y. Shao, A.-D. Li, H.-Q. Ling, D. Wu, Y. Wang, Y. Feng, S.-Z. Yang, Microelectron. Eng. 66, 842 (2003).
16. S. K. Pradhan, P. J. Reucroft, and Y. Ko, Surf. Coat. Technol. 176, 382 (2004).
17. J. Kuzmik, Semicond. Sci. Technol. 17, 540 (2002).
18. F. Medjdoub, D. Ducatteau, C. Gaquiere, J.-F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, N. Grandjean, and E. Kohn, Electron. Lett. 43, 5 (2007).
19. O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman, IEEE Trans. Electron Devices 52, 146 (2005).
20. M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean, Appl. Phys. Lett. 89, 062106 (2006).
21. O. Katz, A. Horn, G. Bahir, and J. Salzman, IEEE Trans. Electron Devices 50, 2002 (2003).
22. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New Jersey, 2006), p. 138.
23. A. P. Edwards, J. A. Mittereder, S. C. Binari, IEEE Electron Device Lett. 26, 225 (2005).