Characteristics of Al2O3/AlInN/GaN MOSHEMT

Electronics Letters

Volumn 43, Issue 12, 2007, Pages 691-692

  Medjdoub, F ^a   Sarazin, N ^b   Tordjman, M ^b   Magis, M ^b   Di Forte Poisson, M A ^b   Knez, M ^c   Delos, E ^d   Gaquiere C ^d   Delage, S L ^b   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b ALCATEL THALES III V LAB   (France)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CURRENT DENSITY; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS;

GATE DIELECTRIC LAYERS; GATE LEAKAGE CHARACTERISTICS; THIN BARRIER LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34249992038     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20070425     Document Type: Article

References (6)

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2. Neuburger, M.: et al. ' Unstrained AlInN/GaN FET ', Int. J. High Speed Electron. Syst., 2004, 14, (3), p. 785 0129-1564
3. Medjdoub, F.: et al. ' Small signal characteristics of AlInN/GaN HEMTs ', Electron. Lett., 2006, 42, p. 779 10.1049/el:20060768 0013-5194
4. Higashiwaki, M.: et al. ' High-performance short-gate InAlN/GaN heterostructure field-effect transistors ', Jpn. J. Appl. Phys., 2006, 45, p. L843 10.1143/JJAP.45.L843 0021-4922
5. 3 gate dielectric for ULSI applications ', Proc. IEEE Int. Electron Devices Meeting, 2000, p. 223-226
6. Asif Khan, M.: et al. ' AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrate ', Appl. Phys. Lett., 2000, 77, p. 1341 0003-6951