Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 790-793

  Cico K ^a   Kuzmik J ^a,b   Gregusova D ^a   Stoklas, R ^a   Lalinsky T ^a   Georgakilas, A ^c   Pogany, D ^b   Frohlich K ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; LEAKAGE CURRENTS; NICKEL COMPOUNDS; OPTIMIZATION;

ELECTRICAL PARAMETERS; METAL OXIDE SEMICONDUCTOR STRUCTURES; SCHOTTKY CONTACTS;

MOS DEVICES;

EID: 34247098392     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.010     Document Type: Article

References (7)

1. Khan M.A., Hu X., Simin G., Lunev A., Yang J., Gaska R., et al. AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistor. IEEE Electron Dev Lett 21 2 (2000) 63-65
2. 4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors. IEEE Electron Dev Lett 24 6 (2003) 541-543
3. 2/(Al)GaN metal-oxide-semiconductor structures: characterization and application. Semicond Sci Technol 19 (2004) 1364-1368
4. 3 as gate dielectric. Appl Phys Lett 86 (2005) 0635011-0635013
5. Hashizume T., Ootomo S., Inagaki T., and Hasegawa H. Surface passivation of GaN and Ga/AlGaN heterostructures by dielectric films its application to insulator-gate heterostructure transistors. J Vac Sci Technol, B 21 (2003) 1828-1838
6. 3 dielectrics on n-type GaN. Appl Phys Lett 82 (2003) 4304-4306
7. Adivarahan V., Yang J., Koudymov A., and Simin G. Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm. IEEE Electron Dev Lett 26 (2005) 535-537