|
Volumn 244, Issue 1-4, 2005, Pages 186-189
|
Theoretical investigation of phase transition on GaAs(0 0 1)-c(4 × 4) surface
a
MIE UNIVERSITY
(Japan)
|
Author keywords
Ab initio calculations; Electron counting Monte Carlo simulation; GaAs surfaces; Surface phase transition
|
Indexed keywords
DIMERS;
GALLIUM COMPOUNDS;
HIGH TEMPERATURE EFFECTS;
METALLORGANIC VAPOR PHASE EPITAXY;
MOLECULAR BEAM EPITAXY;
MONOLAYERS;
MONTE CARLO METHODS;
PHASE DIAGRAMS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SCANNING TUNNELING MICROSCOPY;
SURFACE TREATMENT;
AB INITIO CALCULATIONS;
ELECTRON COUNTING MONTE CARLO SIMULATION;
GAAS SURFACES;
SURFACE PHASE TRANSITION;
PHASE TRANSITIONS;
|
EID: 15944427791
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2004.10.080 Document Type: Conference Paper |
Times cited : (15)
|
References (12)
|