Self-surfactant effect of As on a GaAs(111)A surface

Applied Surface Science

Volumn 162, Issue , 2000, Pages 354-358

  Taguchi, Akihito ^a   Shiraishi, Kenji ^a   Ito, Tomonori ^b  

^a NTT Basic Research Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; COMPOSITION EFFECTS; COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL LATTICES; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; PRESSURE EFFECTS; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE;

ADATOMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034249568     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00215-4     Document Type: Article

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