An STM study of the nature of the transitional phase of the GaAs(111) B surface

Surface Science

Volumn 376, Issue 1-3, 1997, Pages

  Avery, A R ^a   Tok, E S ^a   Jones, T S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Adatoms; Gallium arsenide; Growth; Low index single crystal surfaces; Molecular beam epitaxy; Nucleation; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy; Semiconducting films; Semiconducting surfaces; Surface structure

Indexed keywords

ATOMS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SINGLE CRYSTALS; SURFACE ROUGHNESS;

ADATOMS; LOW INDEX SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION; SURFACE TOPOGRAPHY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0039384297     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00020-4     Document Type: Article

References (13)

1. A.Y. Cho, J. Appl. Phys. 41 (1970) 2780.
2. P. Chen, K.C. Rajkumar and A. Madhukar, J. Vac. Sci. Technol. B 9 (1991) 2312.
3. D.A. Woolf, D.I. Westwood and R.H. Williams, Semicond. Sci. Technol. 8 (1993) 1075.
4. J.M.C. Thornton, P. Weightman, D.A. Woolf and C.J. Dunscombe, Phys. Rev. B 51 (1995) 14459.
5. D.K. Biegelsen, R.D. Bringans, J.E. Northrup and L.-E. Schwartz, Phys. Rev. Lett. 65 (1990) 452.
6. J.R. Arthur, Surf. Sci. 43 (1974) 449.
7. K. Yang and L.J. Sohowalter, App. Phys. Lett. 60 (1992) 1851.
8. J. Fu, J. Kim, M.C. Gallagher, R.F. Willis, D.L. Miller, Surf. Sci. 318 (1994) 349.
9. D.J. Chadi, Phys. Rev. Lett. 57 (1986) 102.
10. E. Kaxiras, Y. Bar-Yam, J.D. Joannopoulos and K.C. Pandey, Phys. Rev. Lett. 57 (1986) 106.
11. A.R. Avery, D.M. Holmes, J. Sudijono, T.S. Jones and B.A. Joyce, Surf. Sci. 323 (1995) 91.
12. M.D. Pashley, Phys. Rev. B 40 (1989) 10481.
13. L.J. Schowalter, K. Yang and T. Thundat, J. Vac. Sci. Technol. B 12 (1994) 2579.