Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 180-185

  Motohisa, J ^a   Noborisaka, J ^a   Takeda, J ^a   Inari, M ^a   Fukui, T ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

A2. Selective area growth; A3. Metalorganic vapor phase epitaxy; B1. Nanowires

Indexed keywords

CATALYSTS; GALLIUM COMPOUNDS; MASKS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

CATALYST-FREE APPROACH; SELECTIVE AREA GROWTH; SEMICONDUTOR NANOWIRE; VAPOR-LIQUID-SOLID (VLS) GROWTH;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 9944256404     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.118     Document Type: Conference Paper

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