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Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 8, 2003, Pages

Domain boundaries in the GaAs(001)-2×4 surface

(4) Takahasi, M a Yoneda, Y a Yamamoto, N b Mizuki, J a,b

a JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

b UNIVERSITY OF HYOGO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; GALLIUM ARSENIDE;

ARTICLE; CALCULATION; CHEMICAL STRUCTURE; FRACTIONATION; MEASUREMENT; PHASE TRANSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; STRUCTURE ANALYSIS; SURFACE PROPERTY; TEMPERATURE DEPENDENCE; X RAY DIFFRACTION;

EID: 0141564909 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.68.085321 Document Type: Article

Times cited : (19)

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