Microscopic investigation of the surface phase transition on GaAs (001) surfaces

Surface Science

Volumn 433-435, Issue , 1999, Pages 382-386

  Shiraishi, Kenji ^a   Ito, Tomonori ^b   Suzuki, Yasuo Y ^a   Kageshima, Hiroyuki ^a   Kanisawa, Kiyoshi ^a   Yamaguchi, Hiroshi ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Density functional calculations; Gallium arsenide; Scanning tunneling microscopy; Surface thermodynamics

Indexed keywords

ATOMS; CRYSTAL ATOMIC STRUCTURE; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; SURFACES; THERMODYNAMICS;

FIRST PRINCIPLES CALCULATIONS; INTERMEDIATE MIXED PHASE; SURFACE PHASE TRANSITION; SURFACE THERMODYNAMICS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033349290     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00131-4     Document Type: Article

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