Evaluation of Schottky junction parameters from current-voltage characteristics exhibiting large excess currents

Applied Surface Science

Volumn 255, Issue 3, 2008, Pages 743-745

  Horvath Zs J ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Current voltage characteristics; GaInAsSb; InP; Leakage currents; Parameter extraction; Schottky junction

Indexed keywords

BIAS VOLTAGE; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; LEAKAGE CURRENTS; LINEAR TRANSFORMATIONS; MATHEMATICAL TRANSFORMATIONS; METADATA; PARAMETER ESTIMATION; PARAMETER EXTRACTION; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

GAINASSB; JUNCTION PARAMETERS; REDUCTION OF ERRORS; RICHARDSON CONSTANT; SATURATION CURRENT; SCHOTTKY JUNCTIONS; TEMPERATURE DEPENDENCE; THERMIONIC EMISSION CURRENT;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 55649104521     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.07.019     Document Type: Article

References (5)

1. Horváth Zs.J., Rakovics V., Szentpáli B., and Püspöki S. Phys. Stat. Sol. (C) (2003) 916
2. Horváth Zs.J., Rakovics V., Szentpáli B., Püspöki S., and Žánský K. Vacuum 71 (2003) 113
3. Rakovics V., Balázs J., Põdör B., Tóth A.L., Horváth Zs.J., and Horváth Z.E. In: Kumar V., and Basu P.K. (Eds). Physics of Semiconductor Devices (2002), Allied Publisher Ltd., New Delhi, India 1195-1199
4. Rakovics V., Tóth A.L., Po{combining double acute accent}dör B., Frigeri C., Balázs J., and Horváth Z.E. Mater. Sci. Eng. B 91-92 (2002) 83
5. Sze S.M. Physics of Semiconductor Devices. 2nd ed. (1981), Wiley, New York