Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Hong, Augustin J ^a   Ogawa, Masaaki ^a   Wang, Kang L ^a   Wang, Yong ^b   Zou, Jin ^b   Xu, Zheng ^a   Yang, Yang ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; GERMANIUM; METALLIC COMPOUNDS; METALS; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SILICON;

HIGH K DIELECTRICS; LOW TEMPERATURE (LTR); METAL-OXIDE SEMICONDUCTOR (MOS); ROOM-TEMPERATURE (RT);

HIGH TEMPERATURE APPLICATIONS;

EID: 47549085729     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2957476     Document Type: Article

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