Increased size of open hexagonally shaped pits due to growth interruption and its influence on InGaN/GaN quantum-well structures grown by metallorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 5 B, 1998, Pages

  Uchida, K ^a   Kawata, M ^a   Yang, T ^a   Miwa, A ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES; ORGANOMETALLICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

GROWN-RATE VARIATION;

EPITAXIAL GROWTH;

EID: 0032066602     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l571     Document Type: Article

References (14)