Nitride-based LEDs with MQW active regions grown by different temperature profiles

IEEE Photonics Technology Letters

Volumn 17, Issue 9, 2005, Pages 1806-1808

  Chang, Shoou Jinn ^a   Wei, S C ^a   Su, Y K ^a   Chuang, R W ^a   Chen, S M ^b   Li, W L ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Epitech Technology Corporation   (Taiwan)

Author keywords

InGaN GaN; Light emitting diode (LED); Multiple quantum well (MQW); Temperature cycling

Indexed keywords

DESORPTION; GALLIUM NITRIDE; LEAKAGE CURRENTS; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL CYCLING; THERMAL EFFECTS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

DOUBLE CRYSTAL X-RAY DIFFRACTION (DCXRD); ELECTROSTATIC DISCHARGE (ESD); TEMPERATURE CYCLING; TEMPERATURE RAMPING;

LIGHT EMITTING DIODES;

EID: 27144447672     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.853270     Document Type: Article

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