Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface

Materials Science and Engineering: B

Volumn 112, Issue 1, 2004, Pages 10-13

  Liu, C H ^a   Chuang, R W ^b   Chang, S J ^b   Su, Y K ^b   Wu, L W ^b   Lin, C C ^c  

^a NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c South Epitaxy Corporation   (Taiwan)

Author keywords

GaN; LED; Low temperature; MQW

Indexed keywords

CONCENTRATION (PROCESS); ELECTRIC POTENTIAL; EPITAXIAL GROWTH; GALLIUM NITRIDE; HOLE MOBILITY; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; SURFACE ROUGHNESS; TEMPERATURE CONTROL;

CAP LAYER; LOW TEMPERATURE; MULTIQUANTUM WELL (MQW); STRUCTURAL PROPERTIES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3843131765     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.05.003     Document Type: Article

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