Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures

Journal of Physics D: Applied Physics

Volumn 40, Issue 17, 2007, Pages 5050-5054

  Senthil Kumar, M ^a   Park, J Y ^a   Lee, Y S ^a   Chung, S J ^a   Hong, C H ^a   Suh, E K ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; DEFECT DENSITY; GROWTH TEMPERATURE; HETEROJUNCTIONS; INCLUSIONS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; SURFACE MORPHOLOGY;

BARRIER GROWTH TEMPERATURE; EMBEDDED INCLUSIONS; MULTI-QUANTUM WELL HETEROSTRUCTURES; TEMPERATURE RAMPING; V-DEFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34548689347     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/17/007     Document Type: Article

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