Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition

Current Applied Physics

Volumn 7, Issue 5, 2007, Pages 469-473

  Kim, T K ^a   Shim, S K ^a   Yang, S S ^a   Son, J K ^a   Hong, Y K ^a   Yang, G M ^a  

^a Chonbuk National University   (South Korea)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

GROWTH PRESSURES; GROWTH TIME; HIGH RESOLUTION X-RAY DIFFRACTION (HRXRD); INDIUM FLOW RATE; PEAK ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34247107071     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2006.10.008     Document Type: Article

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