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Volumn 35, Issue 7, 2002, Pages 599-603

Influence of GaN barrier growth temperature on the photoluminescence of InGaN/GaN heterostructures

(8) Olaizola, S M a Pendlebury, S T a O'Neill, J P a Mowbray, D J a Cullis, A G a Skolnick, M S a Parbrook, P J a Fox, A M a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BARRIER GROWTH TEMPERATURE; BLUE SHIFT; COMPOSITION FLUCTUATIONS; CONTINUOUS WAVE SPECTROSCOPY; EMISSION LINEWIDTH; EMISSION WAVELENGTH; PEAK WAVELENGTH SHIFT; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 0037035252 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/35/7/305 Document Type: Article

Times cited : (25)

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