Nitride-based green light-emitting diodes with high temperature GaN barrier layers

IEEE Transactions on Electron Devices

Volumn 50, Issue 8, 2003, Pages 1766-1770

  Wu, L W ^a   Chang, S J ^a   Su, Y K ^a   Chuang, R W ^a   Wen, T C ^a   Kuo, C H ^a   Lai, W C ^a   Chang, C S ^a   Tsai, J M ^b   Sheu, J K ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Green light emitting diode (LED); InGaN GaN; Multiple quantum well (MQW); Reliability

Indexed keywords

DECOMPOSITION; ELECTRIC POTENTIAL; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM WELLS;

BARRIER LAYERS;

LIGHT EMITTING DIODES;

EID: 0043028452     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815150     Document Type: Article

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