Effect of thermal annealing on structural and optical properties of the GaAs0.963Bi0.037 alloy

Semiconductor Science and Technology

Volumn 23, Issue 12, 2008, Pages

  Moussa, I ^a   Fitouri, H ^a   Chine, Z ^a   Rebey, A ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CERIUM ALLOYS; CRYSTAL GROWTH; LIGHT EMISSION; LUMINESCENCE; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURES; ATOMIC FORCES; CRYSTALLINE QUALITIES; HIGH RESOLUTIONS; METALORGANIC VAPOUR PHASE EPITAXIES; OPTIMAL ANNEALING; SURFACE ACCUMULATIONS; THERMAL ANNEALING; X-RAY DIFFRACTIONS;

GALLIUM ALLOYS;

EID: 58149459314     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/12/125034     Document Type: Article

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