Growth and characterization of GaBiAs epilayers

Optical Materials

Volumn 30, Issue 5, 2008, Pages 756-758

  Pacebutas V ^a   Bertulis, K ^a   Aleksejenko, G ^a   Adomavicius R ^a   Molis, G ^a   Krotkus, A ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

GaBiAs; MBE; Optical properties; Terahertz; Ultrafast processes

Indexed keywords

CHARGE TRAPPING; ENERGY GAP; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS;

GABIAS; LINEAR ABSORPTION; SATURATION INTENSITY; TERAHERTZ; ULTRAFAST PROCESSES;

EPILAYERS;

EID: 37249046485     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2007.02.029     Document Type: Article

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