Characterization of low-temperature molecular-beam-epitaxy grown GaBiAs layers

Semiconductor Science and Technology

Volumn 22, Issue 7, 2007, Pages 819-823

  Pacebutas V ^a   Bertulis, K ^a   Dapkus, L ^a   Aleksejenko, G ^a   Krotkus, A ^a   Yu, K M ^b   Walukiewicz, W ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

OPTICAL PUMP-TERAHERTZ PROBE MEASUREMENTS; SPECTRAL MEASUREMENTS; TIME CONSTANTS;

THIN FILMS;

EID: 34547299919     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/7/026     Document Type: Article

References (18)

1. Smith F W, Calawa A R, Chen C L, Manfra M J and Mahoney L J 1988 IEEE Electron Device Lett. 9 77
2. Krotkus A and Coutaz J-L 2005 Semicond. Sci. Technol. 20 S142
3. Baker C, Gregory I S, Tribe W R, Bradley I V, Evans M J, Linfield E H and Missous M 2004 Appl. Phys. Lett. 85 4965
4. Carmody C, Tan H H, Jagadish C, Gaarder A and Marcinkeviius S 2003 Appl. Phys. Lett. 82 3913
5. Chimot N, Mangeney J, Joulaud L, Crozat P, Bernas H, Blary K and Lampin J F 2005 Appl. Phys. Lett. 87 193510
6. Yoshimoto M, Murata S, Chayahara A, Horima Y, Saraie J and Oe K 2003 Japan. J. Appl. Phys. 42 L1235
7. Tixier S, Adamcyk M, Tiedje T, Francoeur S, Mascarenhas A, Wei P and Schietekatte F 2003 Appl. Phys. Lett. 82 2245
8. Francoeur S, Seong M-J, Mascarenhas A, Tixier S, Adamcyk M and Tiedje T 2003 Appl. Phys. Lett. 82 3874
9. Hase I 2006 US Patent 7,009,225
10. Fluegel B, Francoeur S, Mascarenhas A, Tixier S, Young E C and Tiedje T 2006 Phys. Rev. Lett. 97 067205
11. Janotti A, Wei S-H and Zhang S B 2002 Phys. Rev. B 65 115203
12. Bertulis K, Krotkus A, Aleksejenko G, Paebutas V, Adomaviius R, Molis G and Marcinkeviius S 2006 Appl. Phys. Lett. 88 201112
13. Yamasita K, Yoshimoto M and Oe K 2006 Phys. Status Solidi c 3 693
14. Cooke D G, Hegmann F A, Young E C and Tiedje T 2006 Appl. Phys. Lett. 89 122103
15. Yoshimoto M, Huang W, Feng G and Oe K 2006 Phys. Status Solidi b 7 1421
16. Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
17. Krotkus A, Bertulis K, Kaminska M, Korona K, Wolos A, Siegert J, Marcinkeviius S, Roux J-F and Coutaz J-L 2002 IEEE Proc. Optoelectron. 149 111
18. Molis G, Adomaviius R, Krotkus A, Bertulis K, Gininas L, Pocius J and Danielius R 2007 Electron. Lett. 43 190