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Volumn 237-239, Issue 1-4 II, 2002, Pages 1481-1485

Metalorganic vapor phase epitaxial growth of metastable GaAs1-xBix alloy

Author keywords

A3. Low pressure metalorganic vapor phase epitaxy; B1. Bismuth compounds; B2. Semiconducting III V materials

Indexed keywords

ENERGY GAP; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; TERNARY SYSTEMS;

EID: 0036531174     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02301-6     Document Type: Article
Times cited : (31)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.