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Volumn 237-239, Issue 1-4 II, 2002, Pages 1481-1485
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Metalorganic vapor phase epitaxial growth of metastable GaAs1-xBix alloy
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Author keywords
A3. Low pressure metalorganic vapor phase epitaxy; B1. Bismuth compounds; B2. Semiconducting III V materials
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Indexed keywords
ENERGY GAP;
HIGH TEMPERATURE EFFECTS;
METALLORGANIC VAPOR PHASE EPITAXY;
MOLECULAR BEAM EPITAXY;
NUCLEATION;
PHOTOLUMINESCENCE;
RAPID THERMAL ANNEALING;
TERNARY SYSTEMS;
METASTABLE SEMICONDUCTOR ALLOYS;
GALLIUM ALLOYS;
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EID: 0036531174
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)02301-6 Document Type: Article |
Times cited : (31)
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References (8)
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