Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 1 A, 2006, Pages 67-69

  Takehara, Yuji ^a   Yoshimoto, Masahiro ^a   Huang, Wei ^b   Saraie, Junji ^a   Kunishige, O E ^a   Chayahara, Akiyoshi ^c   Horino, Yuji ^c  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b INSTITUTE OF CHEMISTRY   (China)

^c OSAKA NATIONAL RESEARCH INSTITUTE   (Japan)

Author keywords

GaAsBi; Lattice distortion; Molecular beam epitaxy; Rutherford backscattering; Semimetal semiconductor alloy; X ray diffraction

Indexed keywords

MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

GAASBI; LATTICE DISTORTION; RUTHERFORD BACKSCATTERING; SEMIMETAL-SEMICONDUCTOR ALLOY;

GALLIUM ALLOYS;

EID: 31544467067     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.67     Document Type: Article

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