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Volumn 46, Issue 29-32, 2007, Pages

Influence of thermal annealing treatment on the luminescence properties of dilute GaNAs-bismide alloy

Author keywords

Bismide alloy; Dilute nitride arsenides; GaNAsBi; Photoluminescence; Thermal annealing

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; X RAY DIFFRACTION;

ANNEALING TEMPERATURE; BISMIDE ALLOY; DILUTE-NITRIDE ARSENIDES; EMISSION EFFICIENCY; THERMAL ANNEALING;

GALLIUM COMPOUNDS;

EID: 34548451678 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.L764 Document Type: Article

Times cited : (34)

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