Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1-x Bix

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Lu, X ^a   Beaton, D A ^a   Lewis, R B ^a   Tiedje, T ^a   Whitwick, M B ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BISMUTH; DROPS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; X RAY DIFFRACTION;

NONSTANDARD GROWTH; SUBSTRATE TEMPERATURE; SURFACE SEGREGATE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 44049093329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2918844     Document Type: Article

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