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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 5 A, 2002, Pages 2801-2806

Characteristics of semiconductor alloy GaAs1-xBix

(1) Oe, Kunishige a

a KYOTO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Bi containing semiconductor; GaAs1 xBix; Low temperature growth; Metalorganic vapor phase epitaxy; Temperature insensitive band gap

Indexed keywords

ENERGY GAP; GALLIUM ALLOYS; LATTICE CONSTANTS; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE;

SUPERCONDUCTOR ALLOYS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036578189 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.2801 Document Type: Article

Times cited : (155)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.