메뉴 건너뛰기




Volumn 1, Issue , 2008, Pages 45-91

Deep Reactive Ion Etching of Through Silicon Vias

Author keywords

Deep reactive ion etching (DRIE); Plasma; Via etching

Indexed keywords


EID: 84891289309     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527623051.ch4     Document Type: Chapter
Times cited : (9)

References (53)
  • 1
    • 0142164896 scopus 로고    scopus 로고
    • Method for anisotropic plasma etching of substrates
    • March 12, US Patent 5,498,312 and Laermer, F. and Schilp, A. (March 26 1996) Method of anisotropically etching silicon US Patent 5,501,893
    • Laermer, F. and Schilp, A. (March 12, 1996) Method for anisotropic plasma etching of substrates, US Patent 5,498,312 and Laermer, F. and Schilp, A. (March 26 1996) Method of anisotropically etching silicon US Patent 5,501,893.
    • (1996)
    • Laermer, F.1    Schilp, A.2
  • 2
    • 0004084050 scopus 로고    scopus 로고
    • Fundamentals of Microfabrication: The Science of Miniaturization
    • 2nd edn. CRC Press, Boca Raton, USA
    • Madou, M.J. (2002) Fundamentals of Microfabrication: The Science of Miniaturization, 2nd edn. CRC Press, Boca Raton, USA.
    • (2002)
    • Madou, M.J.1
  • 3
    • 0032678748 scopus 로고    scopus 로고
    • A surface micromachined silicon gyroscope using a thick polysilicon layer
    • Proceedings 12th IEEE Conf. on Micro-Electromechanical Systems, 1999, (MEMS'), Orlando
    • Funk, K., Emmerich, H., Schilp, A. et al. (1999) A surface micromachined silicon gyroscope using a thick polysilicon layer. Proceedings 12th IEEE Conf. on Micro-Electromechanical Systems, 1999, (MEMS'), Orlando, p. 57-60.
    • (1999) , pp. 57-60
    • Funk, K.1    Emmerich, H.2    Schilp, A.3
  • 4
    • 33644906898 scopus 로고    scopus 로고
    • Passive and heterogeneous integration towards a silicon-based System-in-Package concept
    • Roozeboom, F., Kemmeren, A.L.A.M., Verhoeven, J.F.C. et al. (2006) Passive and heterogeneous integration towards a silicon-based System-in-Package concept. Thin Solid Films, 504, 391-396.
    • (2006) Thin Solid Films , vol.504 , pp. 391-396
    • Roozeboom, F.1    Kemmeren, A.L.A.M.2    Verhoeven, J.F.C.3
  • 5
    • 0742293904 scopus 로고    scopus 로고
    • The New Everyday; Views on Ambient Intelligence
    • 010 Publishers, Rotterdam, The Netherlands
    • Aarts, E. and Marzano, S. (2003) The New Everyday; Views on Ambient Intelligence, 010 Publishers, Rotterdam, The Netherlands.
    • (2003)
    • Aarts, E.1    Marzano, S.2
  • 6
    • 84891287062 scopus 로고    scopus 로고
    • ITRS Roadmap, edition, Assembly and Packaging
    • ITRS Roadmap 2005 edition, Assembly and Packaging; www.itrs.net/Links/2005ITRS/Home2005.htm.
    • (2005)
  • 7
    • 34250732027 scopus 로고    scopus 로고
    • 3D Integration at the Wafer Level
    • March, Tech Search International Report
    • Garrou, P.E. and Vardaman, E.J. (March 2006) 3D Integration at the Wafer Level, Tech Search International Report.
    • (2006)
    • Garrou, P.E.1    Vardaman, E.J.2
  • 8
    • 34250870642 scopus 로고    scopus 로고
    • Enabling Technologies for 3-D Integration, Material Research Society Symposium Proceedings
    • 970, Materials Research Society, Warrendale, Pennsylvania
    • Bower, C.A., Garrou, P.E., Ramm, P. and Takahashi, K. (eds) (2007) Enabling Technologies for 3-D Integration, Material Research Society Symposium Proceedings. 970, Materials Research Society, Warrendale, Pennsylvania.
    • (2007)
    • Bower, C.A.1    Garrou, P.E.2    Ramm, P.3    Takahashi, K.4
  • 10
    • 84856248559 scopus 로고    scopus 로고
    • Fabrication of SOI Micromechanical Devices
    • PhD thesis, VTT, Finland, (accessed on September 2007)
    • Kiihamaki, J. (2005) Fabrication of SOI Micromechanical Devices, PhD thesis, VTT, Finland, http://www.vtt.fi/inf/pdf/publications/2005/P559.pdf. (accessed on September 2007).
    • (2005)
    • Kiihamaki, J.1
  • 11
    • 0037683086 scopus 로고    scopus 로고
    • Challenges, developments and applications of silicon deep reactive ion etching
    • Laermer, F. and Urban, A. (2003) Challenges, developments and applications of silicon deep reactive ion etching. Microelectronic Engineering, 67-68, 349-355.
    • (2003) Microelectronic Engineering , vol.67-68 , pp. 349-355
    • Laermer, F.1    Urban, A.2
  • 12
    • 0000744765 scopus 로고
    • Etch channel formation during anodic dissolution of n-type silicon in aqueous hydrofluoric acid
    • Theunissen, M.J.J. (1972) Etch channel formation during anodic dissolution of n-type silicon in aqueous hydrofluoric acid. Journal of the Electrochemical Society, 119, 351-360.
    • (1972) Journal of the Electrochemical Society , vol.119 , pp. 351-360
    • Theunissen, M.J.J.1
  • 13
    • 0025386899 scopus 로고
    • Formation mechanism and properties of electrochemically etched trenches in ntype silicon
    • Lehmann,V. and Foll, H. (1990) Formation mechanism and properties of electrochemically etched trenches in ntype silicon. Journal of the Electrochemical Society, 137, 653-659.
    • (1990) Journal of the Electrochemical Society , vol.137 , pp. 653-659
    • Lehmann, V.1    Foll, H.2
  • 14
    • 0027677480 scopus 로고
    • The physics of macropore formation in low doped n-type silicon
    • Lehmann, V. (1993) The physics of macropore formation in low doped n-type silicon. Journal of the Electrochemical Society, 140, 2836-2843.
    • (1993) Journal of the Electrochemical Society , vol.140 , pp. 2836-2843
    • Lehmann, V.1
  • 19
    • 0031121457 scopus 로고    scopus 로고
    • The limits of macropore array fabrication
    • Lehmann, V. and Gruning, U. (1997) The limits of macropore array fabrication. Thin Solid Films, 297, 13-17.
    • (1997) Thin Solid Films , vol.297 , pp. 13-17
    • Lehmann, V.1    Gruning, U.2
  • 23
    • 0001019934 scopus 로고    scopus 로고
    • Plasma chemistry aspects of a-Si:H deposition using an expanding thermal plasma
    • van de Sanden, M.C.M., Severens, R.J., Kessels, W.M.M. et al. (1998) Plasma chemistry aspects of a-Si:H deposition using an expanding thermal plasma. Journal of Applied Physics, 84, 2426-2435.
    • (1998) Journal of Applied Physics , vol.84 , pp. 2426-2435
    • van de Sanden, M.C.M.1    Severens, R.J.2    Kessels, W.M.M.3
  • 24
    • 0001530983 scopus 로고    scopus 로고
    • Control of ion energy distribution at substrates during plasma processing
    • Wang, S.B. and Wendt, A.E. (2000) Control of ion energy distribution at substrates during plasma processing. Journal of Applied Physics, 88, 643-646.
    • (2000) Journal of Applied Physics , vol.88 , pp. 643-646
    • Wang, S.B.1    Wendt, A.E.2
  • 25
    • 0035440209 scopus 로고    scopus 로고
    • Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity
    • Wang, S.B. and Wendt, A.E. (2001) Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity. Journal of Vacuum Science & Technology A, 19, 2425-2432.
    • (2001) Journal of Vacuum Science & Technology A , vol.19 , pp. 2425-2432
    • Wang, S.B.1    Wendt, A.E.2
  • 26
    • 0030564534 scopus 로고    scopus 로고
    • Low temperature etching of Si and photoresist in high density plasmas
    • Puech, M. and Maquin, P. (1996) Low temperature etching of Si and photoresist in high density plasmas. Applied Surface Science, 100-101, 579-582.
    • (1996) Applied Surface Science , vol.100-101 , pp. 579-582
    • Puech, M.1    Maquin, P.2
  • 28
    • 0018469799 scopus 로고
    • Ionand electron-assisted gas-surface chemistry - An important effect in plasma etching
    • Coburn, J.W. and Winters, H.F. (1979) Ionand electron-assisted gas-surface chemistry - An important effect in plasma etching. Journal of Applied Physics, 50, 3189-3196.
    • (1979) Journal of Applied Physics , vol.50 , pp. 3189-3196
    • Coburn, J.W.1    Winters, H.F.2
  • 29
    • 33646021578 scopus 로고    scopus 로고
    • Deep anisotropic dry etching of silicon microstructures by highdensity plasmas
    • PhD thesis, TU Delft, The Netherlands, and references therein, (accessed on September 2007)
    • Blauw, M.A. (2004) Deep anisotropic dry etching of silicon microstructures by highdensity plasmas, PhD thesis,TUDelft, The Netherlands, and references therein. www.library.tudelft.nl/dissertations/diss_html_2004/as_blauw_2004. (accessed on September 2007).
    • (2004)
    • Blauw, M.A.1
  • 30
    • 0019021889 scopus 로고
    • Optical emission spectroscopy of reactive plasmas:A method for correlating emission intensities to reactive particle density
    • Coburn, J.W. and Chen, M. (1980) Optical emission spectroscopy of reactive plasmas:A method for correlating emission intensities to reactive particle density. Journal of Applied Physics, 51, 3134-3136.
    • (1980) Journal of Applied Physics , vol.51 , pp. 3134-3136
    • Coburn, J.W.1    Chen, M.2
  • 32
    • 49749117213 scopus 로고    scopus 로고
    • Development of vertical and tapered via etch for 3D through wafer interconnect technology
    • Electronics Packaging Technology Conference
    • Tezcan, D.S., de Munck, K., Pham, N. et al. (2006) Development of vertical and tapered via etch for 3D through wafer interconnect technology. Electronics Packaging Technology Conference.
    • (2006)
    • Tezcan, D.S.1    de Munck, K.2    Pham, N.3
  • 34
    • 36549100677 scopus 로고
    • Conductance considerations in the reactive ion etching of high aspect ratio features
    • Coburn, J.W. and Winters, H.F. (1989) Conductance considerations in the reactive ion etching of high aspect ratio features. Applied Physics Letters, 55, 2730-2732.
    • (1989) Applied Physics Letters , vol.55 , pp. 2730-2732
    • Coburn, J.W.1    Winters, H.F.2
  • 35
    • 0344084280 scopus 로고    scopus 로고
    • Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation
    • Blauw, M.A., van der Drift, E., Marcos, G. and Rhallabi, A. (2003) Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation. Journal of Applied Physics, 94, 6311-6318.
    • (2003) Journal of Applied Physics , vol.94 , pp. 6311-6318
    • Blauw, M.A.1    van der Drift, E.2    Marcos, G.3    Rhallabi, A.4
  • 36
    • 0034229039 scopus 로고    scopus 로고
    • Deceleration of silicon etch rate at high aspect ratios
    • Kiihamaki, J. (2000) Deceleration of silicon etch rate at high aspect ratios. Journal of Vacuum Science & Technology A, 18, 1385-1389.
    • (2000) Journal of Vacuum Science & Technology A , vol.18 , pp. 1385-1389
    • Kiihamaki, J.1
  • 37
    • 33745493459 scopus 로고    scopus 로고
    • Aspect ratio dependent etching lag reduction in deep silicon etch processes
    • Lai, S.L., Johnson, D. and Westerman, R. (2006) Aspect ratio dependent etching lag reduction in deep silicon etch processes. Journal of Vacuum Science & Technology A, 24, 1283-1288.
    • (2006) Journal of Vacuum Science & Technology A , vol.24 , pp. 1283-1288
    • Lai, S.L.1    Johnson, D.2    Westerman, R.3
  • 38
    • 0036883214 scopus 로고    scopus 로고
    • Advanced time-multiplexed plasma etching of high aspect ratio silicon structures
    • Blauw, M.A., Craciun, G., Sloof, W.G. et al. (2002) Advanced time-multiplexed plasma etching of high aspect ratio silicon structures. Journal of Vacuum Science & Technology B, 20, 3106-3110.
    • (2002) Journal of Vacuum Science & Technology B , vol.20 , pp. 3106-3110
    • Blauw, M.A.1    Craciun, G.2    Sloof, W.G.3
  • 40
    • 0035673373 scopus 로고    scopus 로고
    • Deep reactive ion etching: a promising technology for micro- and nanosatellites
    • Ayon, A.A., Bayt, R.L. and Breuer, K.S. (2001) Deep reactive ion etching: a promising technology for micro- and nanosatellites. Smart Materials & Structures, 10, 1135-1144.
    • (2001) Smart Materials & Structures , vol.10 , pp. 1135-1144
    • Ayon, A.A.1    Bayt, R.L.2    Breuer, K.S.3
  • 41
    • 84904463919 scopus 로고    scopus 로고
    • Critical aspect ratio dependence in deep reactive ion etching of silicon
    • Proceedings IEEE 12th International Conference on Solid State Sensors, Actuators, Microsystems
    • Yeom, J.,Wu, Y. and Shannon, M.A. (2003) Critical aspect ratio dependence in deep reactive ion etching of silicon, Proceedings IEEE 12th International Conference on Solid State Sensors, Actuators, Microsystems, 1631-1634.
    • (2003) , pp. 1631-1634
    • Yeom, J.1    Wu, Y.2    Shannon, M.A.3
  • 42
    • 34247505036 scopus 로고    scopus 로고
    • A method for tapered deep reactive ion etching using a modified Bosch process
    • Roxhed, N., Griss, P. and Stemme, G. (2007) A method for tapered deep reactive ion etching using a modified Bosch process. Journal of Micromechanics and Microengineering, 17, 1087-1092.
    • (2007) Journal of Micromechanics and Microengineering , vol.17 , pp. 1087-1092
    • Roxhed, N.1    Griss, P.2    Stemme, G.3
  • 44
    • 0029325460 scopus 로고
    • The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control
    • Jansen, H., de Boer, M., Legtenberg, R. and Elwenspoek, M. (1995) The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control. Journal of Micromechanics and Microengineering, 5, 115-120.
    • (1995) Journal of Micromechanics and Microengineering , vol.5 , pp. 115-120
    • Jansen, H.1    de Boer, M.2    Legtenberg, R.3    Elwenspoek, M.4
  • 45
    • 31144461233 scopus 로고    scopus 로고
    • Control of sidewall slope in silicon vias using SF6/O2 plasma etching in a conventional reactive ion etching tool
    • Figueroa, R.F., Spiesshoefer, S., Burkett, S.L. and Schaper, L. (2005) Control of sidewall slope in silicon vias using SF6/O2 plasma etching in a conventional reactive ion etching tool. Journal of Vacuum Science & Technology B, 23, 2226-2231.
    • (2005) Journal of Vacuum Science & Technology B , vol.23 , pp. 2226-2231
    • Figueroa, R.F.1    Spiesshoefer, S.2    Burkett, S.L.3    Schaper, L.4
  • 46
    • 0036684902 scopus 로고    scopus 로고
    • Guidelines for etching silicon MEMS structures using fluorine high-density plasma at cryogenic temperatures
    • de Boer, M.J., Gardeniers, J.G.E., Jansen, H.V. et al. (2002) Guidelines for etching silicon MEMS structures using fluorine high-density plasma at cryogenic temperatures. Journal of Microelectromechanical Systems, 11, 385-401.
    • (2002) Journal of Microelectromechanical Systems , vol.11 , pp. 385-401
    • de Boer, M.J.1    Gardeniers, J.G.E.2    Jansen, H.V.3
  • 47
    • 33845564746 scopus 로고    scopus 로고
    • Development of a novel deep silicon tapered via etch process for throughsilicon interconnection in 3-D integrated systems Electronic Components and Technology Conference
    • Nagarajan, R., Ebin, L., Dayong, L. et al. (2006) Development of a novel deep silicon tapered via etch process for throughsilicon interconnection in 3-D integrated systems Electronic Components and Technology Conference, pp. 383-387.
    • (2006) , pp. 383-387
    • Nagarajan, R.1    Ebin, L.2    Dayong, L.3
  • 51
    • 0000830374 scopus 로고    scopus 로고
    • On the origin of the notching effect during etching in uniform high density plasmas
    • Hwang, G.S. and Giapis, K.P. (1997) On the origin of the notching effect during etching in uniform high density plasmas. Journal of Vacuum Science & Technology B, 15, 70-87.
    • (1997) Journal of Vacuum Science & Technology B , vol.15 , pp. 70-87
    • Hwang, G.S.1    Giapis, K.P.2
  • 52
    • 84891278888 scopus 로고    scopus 로고
    • Feb. 13, Method and apparatus for etching a substrate US Patent 6,187,685
    • Hopkins, J., Johnston, I.R., Bhardwaj, J.K. et al. (Feb. 13 2001) Method and apparatus for etching a substrate US Patent 6,187,685.
    • (2001)
    • Hopkins, J.1    Johnston, I.R.2    Bhardwaj, J.K.3
  • 53
    • 34248336714 scopus 로고    scopus 로고
    • Maximizing power device yield with in situ trench depth measurement
    • Thomas, D. (2007) Maximizing power device yield with in situ trench depth measurement. Solid State Technology, 50 (4), 48-60.
    • (2007) Solid State Technology , vol.50 , Issue.4 , pp. 48-60
    • Thomas, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.