메뉴 건너뛰기




Volumn 2006, Issue , 2006, Pages 383-387

Development of a novel deep silicon tapered via etch process for through-silicon interconnection in 3-D integrated systems

Author keywords

[No Author keywords available]

Indexed keywords

COPPER PLATING; DEPOSITION; DIELECTRIC MATERIALS; ETCHING; METALLIZING;

EID: 33845564746     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2006.1645674     Document Type: Conference Paper
Times cited : (29)

References (11)
  • 1
    • 84948471389 scopus 로고    scopus 로고
    • Fabrication technologies for three-dimensional integrated circuits
    • 18-20 March - San Jose, CA
    • Rafael Reif et al, "Fabrication Technologies for Three-Dimensional Integrated Circuits", International Symposium on Quality Electronic Design (ISQED-2002), 18-20 March 2002 - San Jose, CA.
    • (2002) International Symposium on Quality Electronic Design (ISQED-2002)
    • Reif, R.1
  • 4
    • 84986375465 scopus 로고
    • Silicon-on-silicon MCMs with integrated passive components
    • Proceeding 1992 IEEE 18-20 March
    • Frye R.C et al, "Silicon-on-silicon MCMs with integrated passive components", Multi-Chip Module Conference, 1992. MCMC-92, Proceeding 1992 IEEE 18-20 March 1992, pp 155-158.
    • (1992) Multi-chip Module Conference, 1992. MCMC-92 , pp. 155-158
    • Frye, R.C.1
  • 5
    • 0038350796 scopus 로고    scopus 로고
    • IC stacking technology using fine pitch nanoscale through silicon vias
    • S. Spiesshoefer and L. Schaper, "IC stacking technology using fine pitch nanoscale through silicon vias", Proceedings of the 53rd ECTC, 2003, pp 631.
    • (2003) Proceedings of the 53rd ECTC , pp. 631
    • Spiesshoefer, S.1    Schaper, L.2
  • 6
    • 0036646379 scopus 로고    scopus 로고
    • Through-wafer copper electroplating for three-dimensional interconnects
    • N.T.Nguyen et al, "Through-wafer copper electroplating for three-dimensional interconnects", 2002 Journal of Micromechanics. Micro engineering, Vol-12, pp 395-399.
    • 2002 Journal of Micromechanics. Micro Engineering , vol.12 , pp. 395-399
    • Nguyen, N.T.1
  • 8
    • 0035519156 scopus 로고    scopus 로고
    • Balancing the etching and passivation in time-multiplexed deep dry etching of silicon
    • November/December
    • M. A. Blauw et al, "Balancing the etching and passivation in time-multiplexed deep dry etching of silicon", Journal of Vacuum Science Technology-B, Vol-19(6), November/December 2001, pp 2930-2935.
    • (2001) Journal of Vacuum Science Technology-B , vol.19 , Issue.6 , pp. 2930-2935
    • Blauw, M.A.1
  • 9
    • 24644478692 scopus 로고    scopus 로고
    • High aspect ratio through-wafer interconnect for three dimensional integrated circuits
    • Orlando, Florida (USA), May 31- June 3
    • N.Ranganathan et al., "High aspect ratio through-wafer interconnect for three dimensional integrated circuits", 55th Electronic Components and Technology Conference, Orlando, Florida (USA), May 31- June 3, 2005, pp 343-348.
    • (2005) 55th Electronic Components and Technology Conference , pp. 343-348
    • Ranganathan, N.1
  • 10
    • 8144229690 scopus 로고    scopus 로고
    • A through-wafer interconnect in silicon for RFICs
    • November
    • Joyce H et al, "A Through-Wafer Interconnect in Silicon for RFICs", IEEE Transactions on Electron Devices, Vol. 51,no. 11, November 2004 pp 1765-1771.
    • (2004) IEEE Transactions on Electron Devices , vol.51 , Issue.11 , pp. 1765-1771
    • Joyce, H.1
  • 11
    • 0037840575 scopus 로고    scopus 로고
    • Frequency effect of pulse plating on the uniformity of copper deposition in plated through holes
    • Wen-Ching Tsai et al, "Frequency Effect of Pulse Plating on the Uniformity of Copper Deposition in Plated Through Holes", Journal of The Electrochemical Society, Vol. 150(5), pp 267-272, 2003.
    • (2003) Journal of the Electrochemical Society , vol.150 , Issue.5 , pp. 267-272
    • Tsai, W.-C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.