Adsorption of metal impurities on H-terminated Si surfaces and their influence on the wet chemical etching of Si

Journal of Physics Condensed Matter

Volumn 20, Issue 48, 2008, Pages

  Hynninen, Teemu ^a   Foster, Adam S ^a   Gosálvez, Miguel A ^a   Sato, Kazuo ^b   Nieminen, Risto M ^a  

^a AALTO UNIVERSITY   (Finland)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMIC PHYSICS; ATOMS; COPPER; ETCHING; LEAD ALLOYS; MONTE CARLO METHODS; SILICON;

ADSORPTION STATES; ETCHING PROCESSES; METAL IMPURITIES; MICROMASKING; MONTE CARLO SIMULATIONS; SI SURFACES; SIMULATION RESULTS; SMALL CLUSTERS; TWO TYPES; WET CHEMICALS;

WET ETCHING;

EID: 58149350251     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/48/485005     Document Type: Article

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