Characterization of anisotropic wet etching properties of single crystal silicon: Effects of ppb-level of Cu and Pb in KOH solution

Sensors and Actuators, A: Physical

Volumn 128, Issue 1, 2006, Pages 125-131

  Tanaka, Hiroshi ^a,b   Cheng, Di ^a   Shikida, Mitsuhiro ^a,c,d   Sato, Kazuo ^a,c,d,e,f  

^a NAGOYA UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

^c Institute of Electrical Engineers of   (Japan)

^d Japan Society of Mechanical Engineers   (Japan)

^e Japan Society for Precision Engineering   (Japan)

^f IEEE

Author keywords

Anisotropic etching; Etch rate; Impurity; Silicon; Surface roughness

Indexed keywords

ANISOTROPIC ETCHING; ETCH RATE; REDUCTION-IONIZATION;

ANISOTROPY; CHARACTERIZATION; CRYSTALLOGRAPHY; ETCHING; SINGLE CRYSTALS; SURFACE ROUGHNESS;

SILICON;

EID: 33645142011     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.01.011     Document Type: Article

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