Fast etching of silicon with a smooth surface in high temperature ranges near the boiling point of KOH solution

Sensors and Actuators, A: Physical

Volumn 114, Issue 2-3, 2004, Pages 516-520

  Tanaka, Hiroshi ^a,b   Yamashita, Shuichi ^b   Abe, Yoshitsugu ^b   Shikida, Mitsuhiro ^a   Sato, Kazuo ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

Etching rate; High temperature; KOH solution; Silicon; Surface roughness

Indexed keywords

BOILING LIQUIDS; CHEMICAL VAPOR DEPOSITION; ETCHING; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; POTASSIUM COMPOUNDS; SILICA; SILICON NITRIDE; SILICON WAFERS; SOLUTIONS; SURFACE ROUGHNESS;

BOILING POINTS; ETCHING RATES;

SILICON;

EID: 4344692120     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.11.036     Document Type: Article

References (6)

1. Dziuban J., Walczak R. EMSi-microwave enhanced fast deep anisotropic etching of silicon for MEMS. Sens. Mater. 13:2001;41.
2. J. Dziuban, R. Walczak, Microwave enhanced wet anisotropic etching of silicon utilizing a memory effect of KOH activation - a remote E2MSi process, Proceedings of EUROSENSORS XVI 437, 2002.
3. Karanassios V., Sharples J.T., Nathan A. In situ ultrasonic-assisted etching of 〈1. 0 0〉 Si wafers by KOH Sens. Mater. 9:1997;427.
4. Chen J., Liu L., Tan Z., Jiang Q., Fang H., Xu Y., Liu Y. Study of anisotropic etching of (1. 0 0) Si with ultrasonic agitation Sens. Actuators A. 96:2002;152.
5. Sato K., Shikida M., Yamashiro T., Tsunenaga M., Ito S. Roughening of single-crystal silicon surface etched by KOH water solution. Sens. Actuators A. 73:1999;122.
6. van Veenendaal E., Sato K., Shikida M., Nijdam A.J., van Suchtelen J. Micro-morphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH: velocity source forests. Sens. Actuators A. 93:2001;232.