Ge and GeOx films as sacrificial layer for MEMS technology based on piezoelectric AlN: Etching and planarization processes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5836, Issue , 2005, Pages 1-15

  Sangrador, J ^a   Olivares, J ^a   Iborra, E ^a   Vergara, L ^a   Clement, M ^a   Sanz Hervas A ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

CMP; Etching; Ge; GeO; MEMS; Sacrificial layer

Indexed keywords

AMORPHOUS FILMS; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM; GERMANIUM COMPOUNDS; MICROMACHINING; STOICHIOMETRY;

CMP; GEO; OXYGEN CONTENT; SACRIFICIAL LAYER;

MICROELECTROMECHANICAL DEVICES;

EID: 28344444235     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.608244     Document Type: Conference Paper

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