Concentration dependence of optical absorption in tellurium-doped GaSb

Semiconductor Science and Technology

Volumn 12, Issue 7, 1997, Pages 858-866

  Ghezzi, C ^a,b   Magnanini, R ^a,b   Parisini, A ^a,b   Rotelli, B ^a,b   Tarricone, L ^a,b   Bosacchi, A ^c   Franchi, S ^c  

^a UNIVERSITY OF PARMA   (Italy)

^b INFM   (Italy)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; FERMI LEVEL; LIGHT ABSORPTION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING;

BANDGAP NARROWING EFFECTS; BURSTEIN-MOSS EFFECT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031187466     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/7/016     Document Type: Article

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